Nitride deep-ultraviolet light-emitting diodes with microlens array

نویسندگان

  • M. Khizar
  • Z. Y. Fan
  • K. H. Kim
  • J. Y. Lin
  • H. X. Jiang
چکیده

We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes sUV LEDsd on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 mm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AlN ceramic submounts to improve the thermal dissipation, and the emitted UV light was extracted through the sapphire substrates. With the integrated microlens array, a 55% enhancement in the output power at 20-mA dc driving was achieved compared with the same LED without microlens. The light extraction enhancement is the result of the reduced internal reflections of the light caused by the microlens surface profile. © 2005 American Institute of Physics. fDOI: 10.1063/1.1914960g

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandga...

متن کامل

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar...

متن کامل

Aluminum Nitride Deep - ultraviolet Light - emitting

The shortest-wavelength color of light that is visible to the human eye is violet. As shown in Fig. 1, light with wavelengths shorter than 400 nm is called ultraviolet (UV) light: that from 300 to 400 nm is called near-UV light, that from 200 to 300 nm is called deep-UV light, and that shorter than 200 nm is called vacuum-UV light. Since vacuum-UV is absorbed by air, deep-UV light is the shorte...

متن کامل

III-nitride micro-emitter arrays

III-nitride micro-emitter array technology was developed in the authors’ laboratory around 1999. Since its inception, much progress has been made by several groups and the technology has led to the invention of several novel devices. This paper provides an overview on recent progress in single-chip ac-micro-size light emitting diodes (μLEDs) that can be plugged directly into standard high ac vo...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005